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N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 – MARCH 94
FEATURES
* 60 Volt V DS
* R DSon) =5 ?
ZVN3306A
D
G
S
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T amb =25°C
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T amb =25°C
Operating and Storage Temperature Range
SYMBOL
V DS
I D
I DM
V GS
P tot
T j :T stg
VALUE
60
270
3
± 20
625
-55 to +150
UNIT
V
mA
A
V
mW
°C
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
MAX. UNIT CONDITIONS.
Drain-Source Breakdown
BV DSS
60
V
I D =1mA, V GS =0V
Voltage
Gate-Source Threshold
V GS(th)
0.8
2.4
V
ID=1mA, V DS = V GS
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current(1)
Static Drain-Source On-State
I GSS
I DSS
I D(on)
R DS(on)
750
20
0.5
50
5
nA
μ A
μ A
mA
?
V GS = ± 20V, V DS =0V
V DS =60V, V GS =0
V DS =48V, V GS =0V, T=125°C (2)
V DS =18V, V GS =10V
V GS =10V,I D =500mA
Resistance (1)
Forward Transconductance(1)(2 g fs
150
mS
V DS =18V,I D =500mA
)
Input Capacitance (2)
C iss
35
pF
Common Source Output
C oss
25
pF
V DS =18V, V GS =0V, f=1MHz
Capacitance (2)
Reverse Transfer Capacitance
C rss
8
pF
(2)
Turn-On Delay Time (2)(3)
t d(on)
5
ns
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
t r
t d(off)
t f
7
6
8
ns
ns
ns
V DD ≈ 18V, I D =500mA
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%
3-375
2) Sample test.
(
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